IRF3315 Datasheet and Specifications PDF

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe.

/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
* Operating Junction and.

isc N-Channel MOSFET Transistor IRF3315，IIRF3315 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤70mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variat.

*Static drain-source on-resistance: RDS(on) ≤70mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Combine with the fast switching speed and ruggedized device design
*ABSOLUTE MAXIMUM RAT.