| Part Number | IRF3710Z |
|---|---|
| Manufacturer | International Rectifier |
| Overview | This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperatu. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance . |
IRF3710Z Datasheet
The IRF3710Z is a HEXFET Power MOSFET.
| Part Number | IRF3710Z |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF3710Z，IIRF3710Z
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤18mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·.
*Static drain-source on-resistance: RDS(on) ≤18mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=2. |