| Part Number | IRF3710ZS |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
IRF3710ZS
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variation.
*With To-263(D2PAK) package *Low input capacitance and gate charge *Low gate input resistance *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |
IRF3710ZS Datasheet
The IRF3710ZS is a N-Channel MOSFET.
| Part Number | IRF3710ZS |
|---|---|
| Description | HEXFET Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperatu. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance . |