IRF540NS Datasheet
IRF540NS Datasheet (International Rectifier)
International Rectifier
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi.
e applications. G Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Aval.
IRF540NS Datasheet (Kexin Semiconductor)
Kexin Semiconductor
SMD Type N-Channel MOSFET IRF540NS (KRF540NS) MOSFET ■ Features ● VDS (V) = 100V ● ID = 33 A (VGS = 10V) ● RDS(ON) ＜ 44mΩ (VGS = 10V) ● Fast Switching D TO-263 9.65 (Min) 10.67 (Max) 90 ~ 93 5.
* VDS (V) = 100V
* ID = 33 A (VGS = 10V)
* RDS(ON) ＜ 44mΩ (VGS = 10V)
* Fast Switching
D
TO-263
9.65 (Min) 10.67 (Max)
90 ~ 93
5.33 (Min)
Unit:mm
6.22 (min) 1.65 (max)
4.06 (Min) 4.83 (Max)
1.14 (Min) 1.40 (Max)
9.65 (MAX) 8.51 (MIN) 15.88 (MAX) 14.61 (MIN)
G S
1.27~1.78
1.14~1.40 0.51~.
IRF540NS Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor IRF540NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations.
*With To-263(D2PAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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