IRF540Z Datasheet and Specifications PDF

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF540Z，IIRF540Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.0265Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested .

*Static drain-source on-resistance: RDS(on) ≤0.0265Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*reliable device for use in a wide variety of applications
*ABSOLUTE MAXIMUM RATINGS(T.

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of th.

*
*
*
*
* Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 100V RDS(on) = 26.5mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processin.