IRF634A Datasheet and Specifications PDF

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µ.

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max.) @ VDS = 250V
* Lower RDS(ON): 0.327Ω (Typ.) 1 2 3 IRF634A BVDSS = 250 V RDS(on) = 0.45Ω ID = 8.1 A TO-220 1.Gate 2. Drai.

  
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FEATURES z Avalanche Rugged Technology z Rugged Gate Oxide Technology z Lower Input Capacitance z Extended Safe Operating Area z Lower Leakage Current:10µA (Max.)@VDS=250V z Lower RDS(ON): 0.327 Ω(Typ.

z Avalanche Rugged Technology z Rugged Gate Oxide Technology z Lower Input Capacitance z Extended Safe Operating Area z Lower Leakage Current:10µA (Max.)@VDS=250V z Lower RDS(ON): 0.327 Ω(Typ.) IRF634A Advanced Power MOSFET BVDSS=250V RDS(on)=0.45Ω ID=8.1A TO-220 1. Gate 2. Drain 3.Source Absolut.