| Part Number | IRF640L Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and costeffectiveness. The D2Pak i. ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Ene. |
IRF640L Datasheet and Specifications PDF
The IRF640L is a Power MOSFET.
| Part Number | IRF640L Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surfac.
* Surface mount * Low-profile through-hole * Available in tape and reel Available * Dynamic dV/dt rating * 150 °C operating temperature Available * Fast switching * Fully avalanche rated * Material categorization: for definitions of compliance please see Note * T. |