| Part Number | IRF730A Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | PD - 91902A SMPS MOSFET IRF730A HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results i. SMPS Topologies: l l Single Transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset (Both US Line input only). 1 5/8/00 IRF730A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 400 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coeff. |
IRF730A Datasheet and Specifications PDF
The IRF730A is a SMPS MOSFET.
| Part Number | IRF730A Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
IRF730A
FEATURES ·Drain Current –ID=5.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Fast Switching Speed ·Low Drive Requirement ·Minimum.
*Drain Current *ID=5.5A@ TC=25℃ *Drain Source Voltage- : VDSS= 400V(Min) *Fast Switching Speed *Low Drive Requirement *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Switch Mode Power Supply *Uninterruptable Power Supply *High speed power switching . |
| Part Number | IRF730A Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Nell Power Semiconductor |
| Overview | The Nell IRF730 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanch. RDS(ON) = 1.00Ω @ VGS = 10V Ultra low gate charge(22nC Max.) Low reverse transfer capacitance (CRSS = 4pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF730A) D (Drain) G (Gate) S (Source) PRODUCT . |
| Part Number | IRF730A Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
IRF730A
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
400
VGS = 10 V
1.0.
* Low gate charge Qg results in simple drive requirement Available * Improved gate, avalanche and dynamic dV/dt ruggedness Available * Fully characterized capacitance and avalanche voltage and current * Effective Coss specified * Material categorization: for definitions of compliance please se. |