| Part Number | IRF840A Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µ.
* Avalanche Rugged Technology * Rugged Gate Oxide Technology * Lower Input Capacitance * Improved Gate Charge * Extended Safe Operating Area * Lower Leakage Current: 10µA (Max.) @ VDS = 500V * Lower RDS(ON): 0.638Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TS. |
IRF840A Datasheet and Specifications PDF
The IRF840A is a Power MOSFET.
| Part Number | IRF840A Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview |
PD- 91900A
SMPS MOSFET
IRF840A
HEXFET® Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results .
l l l
Two Transistor Forward Haft Bridge Full Bridge 1
7/7/99
IRF840A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Drain-to-Source Breakdown Voltage 500 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient * * * RDS(on) Static Drain-to-Source On-Resistance * * * VGS(th) Ga. |
| Part Number | IRF840A Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Nell Power Semiconductor |
| Overview | The Nell IRF840 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanch. RDS(ON) = 0.85Ω @ VGS = 10V Ultra low gate charge(63nC Max.) Low reverse transfer capacitance (CRSS = 120pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF840A) D (Drain) G (Gate) S (Source) PRODUCT. |
| Part Number | IRF840A Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.85Ω(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for r.
*Drain Source Voltage- : VDSS= 500V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) *Fast Switching Speed *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Switch mode power supply *Uninterruptable power supply *High speed power switchin. |