IRFBC20 Datasheet and Specifications PDF

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Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is.

* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* Fast switching
* Ease of paralleling Available
* Simple drive requirements
* Material categorization: for definitions of compliance please see Note * This datasheet provides information about parts that .

iscN-Channel MOSFET Transistor IRFBC20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 4.4Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to.

*Low drain-source on-resistance: RDS(ON) = 4.4Ω (MAX)
*Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.