IRFP064 Datasheet and Specifications PDF

iscN-Channel MOSFET Transistor IRFP064 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤9mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum L.

*Low drain-source on-resistance: RDS(ON) ≤9mΩ @VGS=10V
*Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃).

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package i.

* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* Ultra low on-resistance
* Very low thermal resistance Available
* Isolated central mounting hole
* 175 °C operating temperature
* Fast switching
* Material categorization: for definitions of compliance please see .

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