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IRFP260M Datasheet

The IRFP260M is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIRFP260M
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260M，IIRFP260M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot var.
*Static drain-source on-resistance: RDS(on)≤40mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*High Speed Power Switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Vol.
Part NumberIRFP260M
DescriptionIR MOSFET
ManufacturerInfineon
Overview V(BR)DSS RDS(on) max. ID IRFP260MPbF IR MOSFET™ 200V 0.04 50A IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. T.
* Advanced Process Technology
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Ease of Paralleling
* Simple Drive Requirements
* Lead-Free Description V(BR)DSS RDS(on) max. ID IRFP260MPbF IR MOSFET™ 200V 0.04 50A IR MOSFET™ technology from Infineon .

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