IRFP260NPBF Datasheet and Specifications PDF

The IRFP260NPBF is a HEXFET Power MOSFET.

Key Specifications

PackageTO-247-3
Mount TypeThrough Hole
Pins3
Height24.99 mm
Length15.875 mm
Width5.3 mm
Max Operating Temp175 °C
Min Operating Temp-55 °C
Part NumberIRFP260NPBF Datasheet
ManufacturerInternational Rectifier
Overview Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching spee. 5°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recove.
Part NumberIRFP260NPBF Datasheet
DescriptionPower MOSFET
ManufacturerInfineon
Overview Fifth Generation HEXFET Power MOSFETs utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedize.
* Advanced Process Technology
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Ease of Paralleling
* Simple Drive Requirements
* Lead-Free TO-247AC Description Fifth Generation HEXFET Power MOSFETs utilizes advanced processing techniques to achieve e.
Part NumberIRFP260NPBF Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·Ease of paralleling ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variat.
*With TO-247 packaging
*Ease of paralleling
*High speed switching
*Hard switched and high frequency circuits
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications INCHANGE Semiconductor IRFP260NPBF
*ABSOLUTE.

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