| Part Number | IRFP450 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
.
*Drain Current *ID= 14A@ TC=25℃ *Drain Source Voltage- : VDSS= 500V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) *Fast Switching *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode p. |
IRFP450 Datasheet
The IRFP450 is a N-Channel MOSFET Transistor.
| Part Number | IRFP450 |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | . . |
| Part Number | IRFP450 |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is p.
* Dynamic dV/dt Rating * Repetitive Avalanche Rated * Isolated Central Mounting Hole * Fast Switching * Ease of Paralleling * Simple Drive Requirements * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation Power MOSFETs from Vishay . |
| Part Number | IRFP450 |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Intersil |
| Overview |
IRFP450
Data Sheet July 1999 File Number
2331.3
14A, 500V, 0.400 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET desi.
* 14A, 500V * rDS(ON) = 0.400Ω * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Infor. |