IRFR120N Datasheet and Specifications PDF

The IRFR120N is a Power MOSFET.

Key Specifications

PackageDPAK
Mount TypeSurface Mount
Pins3
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Max Operating Temp175 °C
Min Operating Temp-55 °C
Part NumberIRFR120N Datasheet
ManufacturerInternational Rectifier
Overview Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchi. 0°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚† Avalanche Current† Repetitive Avalanche Energy† Peak D.
Part NumberIRFR120N Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IRFR120N, IIRFR120N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤210mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de.
*Static drain-source on-resistance: RDS(on)≤210mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 .

Price & Availability

Seller Inventory Price Breaks Buy
Rochester Electronics 32285 100+ : 0.44 USD
500+ : 0.396 USD
1000+ : 0.3652 USD
10000+ : 0.3256 USD
View Offer
Rochester Electronics 1065 100+ : 0.44 USD
500+ : 0.396 USD
1000+ : 0.3652 USD
10000+ : 0.3256 USD
View Offer
RS (Formerly Allied Electronics) 0 20+ : 1.61 USD
100+ : 1.52 USD
200+ : 1.44 USD
View Offer