| Part Number | IRFR220N Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | SMPS MOSFET PD- 95063A IRFR220NPbF IRFU220NPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS(on) max (mΩ) ID 200V 600 5.0A Benefits l Low Gate to Drai. f.com 1 12/10/04 IRFR/U220NPbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Cur. |
IRFR220N Datasheet and Specifications PDF
The IRFR220N is a Power MOSFET.
| Part Number | IRFR220N Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRFR220N, IIRFR220N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤600mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de.
*Static drain-source on-resistance: RDS(on)≤600mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High frequency DC-DC converters *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Sour. |