| Part Number | IRFZ34L Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe. application. The through-hole version (IRFZ34L) is available for lowprofile applications. S D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS. |
IRFZ34L Datasheet and Specifications PDF
The IRFZ34L is a Power MOSFET.
Key Specifications
| Package | TO-262-3 |
|---|---|
| Mount Type | Through Hole |
| Max Operating Temp | 175 °C |
| Part Number | IRFZ34L Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg.
* Advanced process technology * Surface mount * Low-profile through-hole (IRFZ34L, SiHFZ34L) * 175 °C operating temperature Available * Fast switching * Material categorization: for definitions of compliance please see Available Note * This datasheet provides in. |