| Part Number | IRL620S Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The SMD-220 i. GS @ 5.0 V Continuous Drain Current, VGS @ 5.0 V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery d. |
IRL620S Datasheet and Specifications PDF
The IRL620S is a POWER MOSFET.
| Part Number | IRL620S Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
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IRL620S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating .
* Avalanche Rugged Technology * Rugged Gate Oxide Technology * Lower Input Capacitance * Improved Gate Charge * Extended Safe Operating Area * 150°C Operating Temperature * Lower Leakage Current: 10µA (Max.) @ VDS = 200V * Lower RDS(ON): 0.609Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VG. |
| Part Number | IRL620S Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a.
* Halogen-free According to IEC 61249-2-21 Definition * Surface Mount * Available in Tape and Reel * Dynamic dV/dt Rating * Repetitive Avalanche Rated * Logic Level Gate Drive * RDS(on) Specified at VGS = 4 V and 5 V * Fast Switching * Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generat. |