| Part Number | IRLZ24N Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchi. 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche . |
IRLZ24N Datasheet and Specifications PDF
The IRLZ24N is a HEXFET POWER MOSFET.
| Part Number | IRLZ24N Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRLZ24N， IIRLZ24N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.06Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·.
*Static drain-source on-resistance: RDS(on) ≤0.06Ω *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=. |