The LF357 is a JFET Input Operational Amplifiers.
| Package | SOP |
|---|---|
| Operating Voltage | 15 V |
| Max Voltage (typical range) | 18 V |
| Length | 4.9 mm |
| Width | 3.9 mm |
| Max Operating Temp | 70 °C |
| Min Operating Temp | 0 °C |
| Part Number | LF357 Datasheet |
|---|---|
| Manufacturer | Texas Instruments |
| Overview |
The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). Th.
*1 Advantages * Replace Expensive Hybrid and Module FET Op Amps * Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices * Excellent for Low Noise Applications Using Either High or Low Source Impedance *Very Low 1/f Corner * Offset Adjust Does Not Degrade Drift or Common-Mode Re. |
| Part Number | LF357 Datasheet |
|---|---|
| Description | Series Monolithic JFET Input Operational Amplifiers |
| Manufacturer | National Semiconductor |
| Overview | These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifie. n Low input bias current: 30pA n Low Input Offset Current: 3pA n High input impedance: 1012Ω n Low input noise current: n High common-mode rejection ratio: n Large dc voltage gain: 106 dB 100 dB Features Advantages n Replace expensive hybrid and module FET op amps n Rugged JFETs allow blow-out fre. |
| Part Number | LF357 Datasheet |
|---|---|
| Description | WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS |
| Manufacturer | STMicroelectronics |
| Overview | These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bi. low input bias and offset currents, low input offset voltage and input offset voltage drift,coupledwith offsetadjust which doesnot degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth,extremelyfastsettlingtime, lowvoltageand current noise and a low. |
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