| Part Number | LP3407LT1G Datasheet |
|---|---|
| Manufacturer | LRC |
| Overview | LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS I D (V GS = -10V) RDS(ON) (VGS = -10V) RDS(ON) (VGS = -4.5V) -30V -4.1A < 70mΩ < 100m Ω FEATURES The LP3407LT1G uses advanced t. The LP3407LT1G uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. S- Prefix for Automotive and Other Applications Req uiring Uniq ue Site and Control Change Req uirements; AEC-Q101 Qualified and . |
LP3407LT1G Datasheet and Specifications PDF
The LP3407LT1G is a P-Channel MOSFET.
Key Specifications
| Part Number | LP3407LT1G-ES Datasheet |
|---|---|
| Description | P-channel MOSFET |
| Manufacturer | ElecSuper |
| Overview |
The LP3407LT1G-ES is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-D.
* 30V, RDS(ON)=46mΩ(Typ.) @VGS=-10V RDS(ON)=62mΩ(Typ.) @VGS=-4.5V * Fast Switching * High density cell design for low RDS(on) * Material: Halogen free * Reliable and rugged * Avalanche Rated * Low leakage current 3. Applications * PWM applications * Load switch * Power management in portable/desk. |