MA4AGBLP912 Datasheet and Specifications PDF

The MA4AGBLP912 is a AlGaAs Beamlead PIN Diode.

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Part NumberMA4AGBLP912 Datasheet
ManufacturerMACOM Technology Solutions
Overview The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM’s patented hetero-junction technology, produce less diode “On” resistance than co.
* Low Series Resistance
* Low Capacitance
* 5 Nanosecond Switching Speed
* Can be Driven by a Buffered +5 V TTL
* Silicon Nitride Passivation
* Polyimide Scratch Protection
* RoHS Compliant Applications
* Aerospace & Defense
* ISM Description The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enha.
Part NumberMA4AGBLP912 Datasheet
DescriptionAlGaAs Beam Lead PIN Diode
ManufacturerTyco Electronics
Overview M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide Anode Enhanced, Beam Lead PIN Diode. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode “On” res. n n n n n n n Outline ( Topview ) Ultra Low Capacitance < 22 fF Excellent RC Product < 0.10 pS High Switching Cutoff Frequency > 110 GHz 5 Nanosecond Switching Speed Driven by Standard +5 V TTL PIN Diode Driver Silicon Nitride Passivation Polyamide Scratch Protection - + Description M/A-COM's M.