MBR12020CT Datasheet and Specifications PDF

The MBR12020CT is a (MBR12020CT - MBR12040CTR) Schottky Power Diode.

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Part NumberMBR12020CT Datasheet
ManufacturerNaina Semiconductor
Overview Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR12020CT thru MBR12040CTR Silicon Schottky Diode, 120A TWIN .
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* Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR12020CT thru MBR12040CTR Silicon Schottky Diode, 120A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC.
Part NumberMBR12020CT Datasheet
Description(MBR12020CT - MBR120100CTR) SCHOTTKY DIODES
ManufacturerTRANSYS
Overview Transys Electronics L I M I T E D MBR12020CT(R) THRU MBR120100CT(R) SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability Types Up to 100V V RRM 120Amp Rectifier 20-100 Volts TWIN TOWER. High Surge Capability Types Up to 100V V RRM 120Amp Rectifier 20-100 Volts TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175 Part Number Maximum Recurrent Peak Reverse Voltage 20V 30V 35V 40V 45V 60V 80V 100V B Maximum RMS Voltage 14V 21V 25V.
Part NumberMBR12020CT Datasheet
DescriptionSilicon Power Schottky Diode
ManufacturerGeneSiC
Overview Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR12020CT thru MBR12040CTR VRRM = 20 V - 40 V IF(AV) = 120 A Twin Tower Package Maxi.
* High Surge Capability
* Types from 20 V to 40 V VRRM
* Not ESD Sensitive MBR12020CT thru MBR12040CTR VRRM = 20 V - 40 V IF(AV) = 120 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR12020CT(R) MBR.
Part NumberMBR12020CT Datasheet
DescriptionSilicon Power Schottky Diode
ManufacturerAmerica Semiconductor
Overview Free Datasheet Free Datasheet . .