| Part Number | MD1803DFX |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA. SYMBOL PARAMETER CONDITIONS V(BR)EBO Eollector-base breakdown Voltage IC= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB=1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5.0A; IB=1.25A ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 VCB= 1500V ; IE= 0 ,TC=125 IE. |
MD1803DFX Datasheet
The MD1803DFX is a Silicon NPN Power Transistor.
| Part Number | MD1803DFX |
|---|---|
| Description | High voltage NPN Power transistor |
| Manufacturer | STMicroelectronics |
| Overview |
The MD1803DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing update.
* State-of-the-art technology: * Diffused collector “enhanced generation” * More stable performance versus operating temperature variation * Low base drive requirement * Tighter hFE range at operating collector current * Fully insulated power package U.L. compliant * Integrated free wheeling diode *. |