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MJ11032 Datasheet

The MJ11032 is a Darlington Power Transistors. Download the datasheet PDF and view key features and specifications below.

Part NumberMJ11032
ManufacturerTaitron Components
Overview Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak Base Current Collector Power Dissipation at TC=25°C Derate above 25°C Thermal .
* Designed for use as output devices in complementary General purpose amplifier
* High Gain Darlington performance
* High DC Current Gain: hFE=1000 (min) @ Ic=25A hFE=400 (min) @ Ic=50A
* Monolithic construction with built-in base-emitter shunt resistor
* RoHS Compliant TO-3 Mechanical Data
* Case.
Part NumberMJ11032
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to the PNP MJ11033 ·Minimum Lot-to-Lot variations for . is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 25A; IB= 250mA V CE(sa.
Part NumberMJ11032
DescriptionPower Transistor
ManufacturerDIGITRON
Overview MJ11028, MJ11030, MJ11032 – NPN MJ11029, MJ11031, MJ11033 – PNP High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS FEATURES  .
* Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
* Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Collector-emitter voltage Collector-base voltage Emitter-base voltage .
Part NumberMJ11032
Description50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11028/D High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier appl. ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ.

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