| Part Number | MJ14003 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and . MJ14003 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -250mA, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= -25A ,IB= -2.5A VCE(sat)2 Collector-Emitter Saturation Voltage IC= -50A ,IB= -5.. |
MJ14003 Datasheet
The MJ14003 is a NPN Transistor.
| Part Number | MJ14003 |
|---|---|
| Description | 60 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ14001/D
High-Current Complementary Silicon Power Transistors
. . . designed for use in high–power amplifier and switching circuit appl.
B IE MJ14001 60 60 MJ14002 MJ14003 80 80 Unit Vdc Vdc Vdc Adc Adc Collector *Emitter Voltage Collector Base Voltage Emitter *Base Voltage 5 Collector Current * Continuous Base Current * Continuous 60 15 75 Emitter Current * Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and. |
| Part Number | MJ14003 |
|---|---|
| Description | Complementary Silicon Power Transistors |
| Manufacturer | onsemi |
| Overview |
MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP)
*Preferred Devices
High−Current Complementary Silicon Power Transistors
Designed for use in high−power amplifier and switching circuit applications.
Feat.
* High Current Capability * IC Continuous = 60 Amperes * DC Current Gain * hFE = 15 *100 @ IC = 50 Adc * Low Collector *Emitter Saturation Voltage *VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc * Pb *Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit . |