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MJD47 Datasheet

The MJD47 is a Silicon NPN Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberMJD47
ManufacturerInchange Semiconductor
Overview ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS. T ℃/W ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor MJD47 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=.
Part NumberMJD47
DescriptionHigh Voltage Power Transistors
Manufactureronsemi
Overview High Voltage Power Transistors DPAK for Surface Mount Applications MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G Designed for line operated audio output amplifier, switchmode supply drivers and other switc.
* Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
* Electrically Similar to Popular TIP47, and TIP50
* Epoxy Meets UL 94 V−0 @ 0.125 in
* NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capa.
Part NumberMJD47
DescriptionNPN SILICON POWER TRANSISTORS
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD47/D High Voltage Power Transistors DPAK For Surface Mount Applications • • • • • • Designed for line operated audio output amplifier. ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ.
Part NumberMJD47
DescriptionHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
ManufacturerSTMicroelectronics
Overview The MJD47 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb. A W o o C C January 2000 1/6 MJD47 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off.

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