MJE172 Datasheet and Specifications PDF

The MJE172 is a Complementary Plastic Silicon Power Transistors.

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Part NumberMJE172 Datasheet
Manufactureronsemi
Overview MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio .
* Collector
*Emitter Sustaining Voltage
* VCEO(sus) = 40 Vdc
* MJE170, MJE180 = 60 Vdc
* MJE171, MJE181 = 80 Vdc
* MJE172, MJE182 DC Current Gain
* hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc Current
*Gain
* Bandwidth Product
* fT = 50 MHz (Min) @ IC = 100 mAdc Annular C.
Part NumberMJE172 Datasheet
DescriptionLow Power Transistor
ManufacturerMulticomp
Overview Plastic, PNP, Silicon Power Transistorin A TO-126 PK Designed for low power audio amplifier and low current, high speed switching. Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collec. mitter Saturation Voltage Base-Emitter On Voltage VCE(sat) VBE(on) IC=1.5A, IB=150mA IC=3A, IB=600mA IC=500mA, VCE=1V Min. Max. Unit 80 - V - 0.1 μA - 0.1 50 250 - 30 - - 12 - - - 0.3 - 0.9 - 1.7 V - 1.5 - 2 - 1.2 Pag.
Part NumberMJE172 Datasheet
DescriptionPOWER TRANSISTOR
ManufacturerCentral Semiconductor
Overview 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . .
Part NumberMJE172 Datasheet
DescriptionLow voltage high speed switching NPN transistor
ManufacturerSTMicroelectronics
Overview teThis device is an NPN low voltage transistor lemanufactured using epitaxial planar technology oand housed in a SOT-32 plastic package. It is sdesigned for low power audio amplifiers and low Obsolete.
* High speed switching
* NPN device t(s)Applications c
* Audio amplifier u
* High speed switching applications ProdDescription teThis device is an NPN low voltage transistor lemanufactured using epitaxial planar technology oand housed in a SOT-32 plastic package. It is sdesigned for low power audio.