| Part Number | MMDL770T1 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MMDL770T1 Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital app.
, 2001
1
January, 2000 * Rev. 0 Publication Order Number: MMDL770T1/D Free Datasheet MMDL770T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Diode Capacitance (VR = 20 Volts, f = 1.0 MHZ) Reverse Le. |
MMDL770T1 Datasheet and Specifications PDF
The MMDL770T1 is a Schottky Barrier Diode.
| Part Number | MMDL770T1 Datasheet |
|---|---|
| Description | Schottky Barrier Diode |
| Manufacturer | ETL |
| Overview |
Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications..
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Characteristic Reverse Breakdown Voltage (I R = 10 µA) Diode Capacitance (V R = 20 Volts, f = 1.0 MHz) Reverse Leakage (V R = 35 V) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mA) Symbol V (BR)R CT IR Min 70 * * Typ * 0.5 9.0 Max * 1.0 200 Unit Volts pF nAdc V F * 0.7 1.0 Vdc S4 *1/3 Free. |