| Part Number | MRF175GU Datasheet |
|---|---|
| Manufacturer | Tyco Electronics |
| Overview |
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF175GU/D
The RF MOSFET Line
RF Power Field-Effect Transistors
N–Channel Enhancement–Mode
Designed for broadband commercial and military applica.
ent * Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 65 65 ±40 26 400 2.27 *65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W. |
MRF175GU Datasheet and Specifications PDF
The MRF175GU is a N-CHANNEL MOS BROADBAND RF POWER FET.
Key Specifications
| Mount Type | Screw |
|---|---|
| Pins | 5 |
| Max Operating Temp | 200 °C |
| Min Operating Temp | -65 °C |
| Part Number | MRF175GU Datasheet |
|---|---|
| Description | N-CHANNEL MOS BROADBAND RF POWER FET |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF175GU/D
The RF MOSFET Line
RF Power Field-Effect Transistors
N–Channel Enhancement–Mode
Designed for broadband commercial and milita.
Drain Current * Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 65 65 ± 40 26 400 2.27 * 65 to +150 200 Unit Vdc Vdc Vdc. |