| Part Number | MRF448 Datasheet |
|---|---|
| Manufacturer | Tyco Electronics |
| Overview |
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF448/D
The RF Line
NPN Silicon RF Power Transistor
Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 t.
l RθJC Max 0.6 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector *Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector *Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector *Base Breakdown Volta. |
MRF448 Datasheet and Specifications PDF
The MRF448 is a RF POWER TRANSISTOR.
Key Specifications
| Mount Type | Chassis Mount, Screw |
|---|---|
| Pins | 4 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | MRF448 Datasheet |
|---|---|
| Description | RF POWER TRANSISTOR |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF448/D
NPN Silicon RF Power Transistor
Designed primarily for high–voltage applications as a high–power linear amplifier f.
Case Symbol RθJC Max 0.6 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector *Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector *Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector *Base Break. |
| Part Number | MRF448 Datasheet |
|---|---|
| Description | HG RF POWER TRANSISTOR |
| Manufacturer | HGSemi |
| Overview |
H G Semiconductors
HG RF POWER TRANSISTOR
MRF448
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Id.
00 mAdc, VBE = 0) Collector *Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter *Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f =. |