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MTB3N100E Datasheet

The MTB3N100E is a High Energy Power FET. Download the datasheet PDF and view key features and specifications below.

Part NumberMTB3N100E
Manufactureronsemi
Overview MTB3N100E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate http://onsemi.com TMOS POWER FET The D2PAK package has the capa. areas are critical and offer additional safety margin against unexpected voltage transients. 3.0 AMPERES, 1000 VOLTS RDS(on) = 4.0 W CASE 418B−02, Style 2 D2PAK D
* Robust High Voltage Termination
* Avalanche Energy Specified ®G
* Source−to−Drain Diode Recovery Time Comparable to a Discrete Fas.
Part NumberMTB3N100E
DescriptionTMOS POWER FET
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB3N100E Motorola Preferred Device N–C. r bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM ® D G CASE 418B
  –02, Style 2 D2PAK S
* Robust High Voltage Termination
* Avalanc.

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