NAND04GW3B2B Datasheet and Specifications PDF

The NAND04GW3B2B is a NAND Flash Memories.

Key Specifications

Operating Voltage3 V
Max Voltage (typical range)3.6 V
Min Voltage (typical range)2.7 V
Length18.4 mm
Width12 mm
Max Operating Temp85 °C
Min Operating Temp-40 °C
Datasheet4U Logo
Part NumberNAND04GW3B2B Datasheet
ManufacturerSTMicroelectronics
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Memory array organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.1 Bad Blocks . . . . summary
* High density NAND Flash Memory
* up to 8 Gbit memory array
* Up to 256 Mbit spare area
* Cost effective solution for mass storage applications NAND Interface
* x8 bus width
* Multiplexed Address/ Data Supply voltage
* 3.0V device: VDD = 2.7 to 3.6V Page size
* (2048 + 64 spare) Bytes Bloc.
Part NumberNAND04GW3B2B Datasheet
DescriptionNAND Flash Memories
ManufacturerNumonyx
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Memory array organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.
* High density NAND Flash Memory
* up to 8 Gbit memory array
* Up to 256 Mbit spare area
* Cost effective solution for mass storage applications
* NAND Interface
* x8 bus width
* Multiplexed Address/ Data
* Supply voltage
* 3.0V device: VDD = 2.7 to 3.6V
* Page size
* (2048 + 64 spare) Bytes
* Block.

Price & Availability

Availability and pricing information from multiple distributors.

Seller Inventory Price Breaks Buy
ICPartonline 31651 1+ : 7 USD
10+ : 6.65 USD
100+ : 6.3 USD
1000+ : 5.95 USD
View Offer
Win Source 20 - View Offer
Run Hong Electronics 8200 1+ : 9.9093 USD View Offer