| Part Number | NCE6005AS Datasheet |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| Overview |
The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS=60V,ID=5A RDS(ON) .
* VDS=60V,ID=5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ) * High density cell design for ultra low Rdson * Fully characterized avalanche voltage and current * Good stability and uniformity with high EAS * Excellent package for good heat dissipation * Special process tech. |
NCE6005AS Datasheet and Specifications PDF
The NCE6005AS is a N-Channel Enhancement Mode Power MOSFET.
| Part Number | NCE6005AS Datasheet |
|---|---|
| Description | Dual N-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
NCE6005AS-VB
NCE6005AS-VB Datasheet
Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A) per leg
Configuration
.
* TrenchFET® power MOSFET * 100 % Rg and UIS tested D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduct. |