| Part Number | NCE8205 Datasheet |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| Overview |
The NCE8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in.
* VDS = 20V,ID = 4A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V D1 G1 G2 D2 S1 S2 Schematic diagram * High Power and current handing capability * Lead free product is acquired * Surface Mount Package Marking and pin Assignment Application * Battery protection * Load switch * Power mana. |
NCE8205 Datasheet and Specifications PDF
The NCE8205 is a N-Channel Enhancement Mode Power MOSFET.
| Part Number | NCE8205 Datasheet |
|---|---|
| Description | N-Channel MOSFETS |
| Manufacturer | JCST |
| Overview | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS NCE8205 N-Channel MOSFETS FEATURE Low on-resistance APPLICATIONS Li-ion battery management applications SOT-2. Low on-resistance APPLICATIONS Li-ion battery management applications SOT-23-6L Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation (note 1, Ta=25℃) Maximum Power Dissipation (note 2, Tc=25℃) Thermal Resist. |