| Part Number | NDS9407 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to. -3.0A, -60V. RDS(ON) = 0.15Ω @ VGS =-10V R DS(ON) = 0.24Ω @ VGS =-4.5V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________________ . |
NDS9407 Datasheet and Specifications PDF
The NDS9407 is a Single P-Channel MOSFET.
Key Specifications
| Package | SOIC |
|---|---|
| Mount Type | Surface Mount |
| Pins | 8 |
| Height | 1.75 mm |
| Length | 5 mm |
| Width | 4 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | NDS9407 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | onsemi |
| Overview |
This P−Channel MOSFET is a rugged gate version of onsemi’s
advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.
* *3 A, *60 V. RDS(ON) = 150 mW @ VGS = *10 V RDS(ON) = 240 mW @ VGS = *4.5 V * Low Gate Charge * Fast Switching Speed * High Performance Trench Technology for Extremely Low RDS(ON) * High Power and Current Handling Capability * These Device is Pb *Free and Halide Free Applications * Power Management. |