NDS9407 Overview
Description
This P-Channel MOSFET is a rugged gate version of onsemi’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V – 20 V).
Key Features
- 3 A, -60 V. RDS(ON) = 150 mW @ VGS = -10 V RDS(ON) = 240 mW @ VGS = -4.5 V
- Low Gate Charge
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- These Device is Pb-Free and Halide Free
