NDS9407 - P-Channel MOSFET

onsemi

General Description

This P

advanced PowerTrench process.

20 V).

Key Features

3 A,.
60 V. RDS(ON) = 150 mW @ VGS =.
10 V RDS(ON) = 240 mW @ VGS =.
4.5 V.
Low Gate Charge.
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(ON).
High Power and Current Handling Capability.
These Device is Pb.
Free and Halide Free.

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NDS9407 p-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	NDS9407
Manufacturer	onsemi
File Size	235.67 KB
Description	P-Channel MOSFET
Datasheet	NDS9407 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, POWERTRENCH) 60 V NDS9407 General Description This P−Channel MOSFET is a rugged gate version of onsemi’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V – 20 V). Features • −3 A, −60 V. RDS(ON) = 150 mW @ VGS = −10 V RDS(ON) = 240 mW @ VGS = −4.