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NDS9407 Datasheet Single P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: June 1999 NDS9407 Single P-Channel Enhancement Mode Field Effect.

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and mutation modes.

These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Key Features

  • -3.0A, -60V. RDS(ON) = 0.15Ω @ VGS =-10V R DS(ON) = 0.24Ω @ VGS =-4.5V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous TA = 25°C TA = 70°C TA =.

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