The NP100P06PLG is a MOS FIELD EFFECT TRANSISTOR.
| Package | TO-263 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 4.65 mm |
| Length | 10 mm |
| Width | 9 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | NP100P06PLG Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. * Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = *10 V, ID = *50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = *4.5 V, ID = *50 A) * High current rating: ID(DC) = m100 A * Built-in gate protection diode (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source. |
| Part Number | NP100P06PLG Datasheet |
|---|---|
| Description | P-channel Power MOSFET |
| Manufacturer | Renesas |
| Overview |
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS.
* Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A ) * Low input capacitance : Ciss = 15000 pF Typ. * Built-in gate protection diode * Designed for automotive application and AEC-Q101 qualified. * Pb-free (This product. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Renesas | 1490 | 1+ : 6.2 USD 10+ : 4.161 USD 100+ : 3.0049 USD 800+ : 2.44375 USD |
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| DigiKey | 1490 | 1+ : 6.2 USD 10+ : 4.161 USD 100+ : 3.0049 USD |
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| DigiKey | 1490 | 1+ : 6.2 USD 10+ : 4.161 USD 100+ : 3.0049 USD |
View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| NP100P06PDG | VBsemi | P-Channel 60V MOSFET |
| NP100P06PDG | Renesas | P-channel Power MOSFET |
| NP100P06PDG | NEC | MOS FIELD EFFECT TRANSISTOR |