P2804BDG Datasheet
P2804BDG Datasheet (UNIKC)
UNIKC
P2804BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 28mΩ @VGS = 10V ID 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDI.
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P2804BDG Datasheet (NIKO-SEM)
NIKO-SEM
NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28m ID 10A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE .
Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TC = 125 °C VDS = 10V, VGS = 10V 40 40 1 1.5 2.5 ±250 1 10 nA µA A V LIMITS UN.