P2804ND5G Datasheet PDF

ABSOLUTE MAXIMUM RATINGS

(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 40 VDS P -40 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current N 21 TC = 25 °C P -16 ID N 13 TC = 100°C P -10 Pulsed Drain Current1 N 50 IDM P -50 Avalanche Current N 26 IAS P -26 Avalanche Energy L = 0.1mH N 33 EAS P 33 Power Dissipation TC = 25 °C TC = 100 °C PD N 21 P N 8 P Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C REV 1.0 1 2014-5-8 P2804ND5G N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 6 40 UNITS °C / W

ELECTRICAL CHARACTERISTICS

(TJ = 25 °C, Un