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P2804ND5G - N-&P-Channel MOSFET

Download the P2804ND5G datasheet PDF. This datasheet also covers the P2804ND5G_NIKO variant, as both devices belong to the same n-&p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P2804ND5G_NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary P2804ND5G TO-252-5 Lead-Free PRODUCT SUMMARY S2 G2 S1 G1 V(BR)DSS N-Channel P-Channel 40 -40 RDS(ON) 28m 55m ID 7A -5.5A G1 D1/D2 D1 G2 D2 S1 S2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 1 1 SYMBOL VDS VGS N-Channel P-Channel 40 ±20 7 6 50 3 2.1 -55 to 150 275 -40 ±20 -5.5 -4.