P2804ND5G Datasheet
P2804ND5G Datasheet (UNIKC)
UNIKC
P2804ND5G N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28mΩ @VGS =10V -40V 48mΩ @VGS = -10V ID 21A -16A Channel N P TO-252-5 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C U.
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P2804ND5G Datasheet (NIKO-SEM)
NIKO-SEM
NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary P2804ND5G TO-252-5 Lead-Free PRODUCT SUMMARY S2 G2 S1 G1 V(BR)DSS N-Channel P-Channel 40 -40 RDS(ON) 28m 55m ID 7A -5.
herwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC VGS = 0V, ID = 250µA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V N-Ch P-Ch N-Ch.