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P2804NVG - N-&P-Channel MOSFET

Download the P2804NVG datasheet PDF. This datasheet also covers the P2804NVG_NIKO variant, as both devices belong to the same n-&p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P2804NVG_NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
P2804NVG N&P-Channel MOSFET UNIKC
P2804ND5G N-Channel MOSFET UNIKC
P2804BDG N-Channel MOSFET UNIKC
P2804BI MOSFET UNIKC
P2804BVG N-Channel MOSFET UNIKC

Other Datasheets by NIKO-SEM

Part Number Description
P2804ND5G N-&P-Channel MOSFET
P2804BDG N-Channel MOSFET
P2804BVG N-Channel MOSFET
P2804HVG Dual N-Channel MOSFET
P2803NVG N-&P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 40 -40 RDS(ON) 28m 65m ID 7A -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) 1 1 SYMBOL VDS VGS N-Channel P-Channel 40 ±20 7 6 20 2 1.3 -55 to 150 275 -40 ±20 -6 -5 -20 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg TL W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.