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NIKO-SEM
Dual N-Channel Enhancement Mode Field Effect Transistor
P2804HVG
SOP-8 Lead-Free
PRODUCT SUMMARY V(BR)DSS 40 RDS(ON) 28m ID 7A G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.)
1
SYMBOL VDS VGS
LIMITS 40 ±20 7 6 40 2 1.3 -55 to 150 275
UNITS V V
TC = 25 °C TC = 70 °C
ID IDM
A
TC = 25 °C TC = 70 °C
PD Tj, Tstg TL
W
°C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient
1 2
SYMBOL RθJA
TYPICAL
MAXIMUM 62.5
UNITS °C / W
Pulse width limited by maximum junction temperature.
P2804HVG Datasheet
