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P2804HVG - Dual N-Channel MOSFET

Download the P2804HVG datasheet PDF. This datasheet also covers the P2804HVG_NIKO variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P2804HVG_NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P2804HVG
Manufacturer NIKO-SEM
File Size 320.16 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet P2804HVG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2804HVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS 40 RDS(ON) 28m ID 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) 1 SYMBOL VDS VGS LIMITS 40 ±20 7 6 40 2 1.3 -55 to 150 275 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg TL W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.5 UNITS °C / W Pulse width limited by maximum junction temperature.