| Part Number | PED2310L Datasheet |
|---|---|
| Manufacturer | ChipSourceTek |
| Overview |
The PED2310L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PED2310L
General Features
● VDS .
* VDS = 18V, ID = 8A RDS(ON) < 15mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 17mΩ @ VGS=3.8V RDS(ON) < 19mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=2.5V ESD Rating: 4000V HBM * High Power and current handing capability * Lead free product is acquired * Surface Mount Package k Application e * PWM applic. |
PED2310L Datasheet and Specifications PDF
The PED2310L is a N-Channel Enhancement Mode Power MOSFET.
| Part Number | PED2310L Datasheet |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Manufacturer | semi one |
| Overview |
The PED2310L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM a.
* VDS = 20V,ID =8A RDS(ON) =11.5 mΩ @ VGS=4.5V RDS(ON) =12mΩ @ VGS=4.2V RDS(ON) =12.8mΩ @ VGS=3.8V RDS(ON) =15.5mΩ @ VGS=2.5V ESD Rating: 2000V HBM * High Power and current handing capability * Lead free product is acquired * Surface Mount Package Application *PWM application *Load switch Schematic. |