PMCM6501VNE Datasheet
PMCM6501VNE Datasheet (Nexperia)
Nexperia
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Ultra sm.
and benefits
* Low threshold voltage
* Ultra small package: 0.98 × 1.48 × 0.35 mm
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits
4. Quick reference data
Table 1. Qu.
PMCM6501VNE Datasheet (NXP Semiconductors)
NXP Semiconductors
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Ultra sm.
and benefits
* Low threshold voltage
* Ultra small package: 0.98 × 1.48 × 0.35 mm
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits
4. Quick reference data
Table 1. Qu.