PMDT290UCE Datasheet and Specifications PDF

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Fe.

and benefits
* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV
* AEC-Q101 qualified 1.3 Applications
* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol RDSon Quick reference data Parameter drain-sou.

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Featur.

and benefits
* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV
* AEC-Q101 qualified 1.3 Applications
* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Condition.