Datasheet4U Logo Datasheet4U.com

PMDT290UNE - dual N-channel MOSFET

Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Very fast switching.
  • Trench MOSFET technology.
  • ESD protection up to 2 kV 3.

📥 Download Datasheet

Datasheet preview – PMDT290UNE

Datasheet Details

Part number PMDT290UNE
Manufacturer nexperia
File Size 265.67 KB
Description dual N-channel MOSFET
Datasheet download datasheet PMDT290UNE Datasheet
Additional preview pages of the PMDT290UNE datasheet.

📁 Similar Datasheet

  • PMDT290UNE - 800mA dual N-channel Trench MOSFET (NXP)
  • PMDT290UCE - 800 / 550 mA N/P-channel Trench MOSFET (NXP Semiconductors)
  • PMDT670UPE - MOSFET (NXP Semiconductors)
  • PMD02N60N - N-Channel MOSFETs (Potens semiconductor)
  • PMD03N80R - N-Channel MOSFETs (Potens semiconductor)
  • PMD04N65M - N-Channel MOSFETs (Potens semiconductor)
  • PMD05N50M - N-Channel MOSFETs (Potens semiconductor)
  • PMD10K - SILICON POWER DARLING TRANSISTORS (Central Semiconductor Corp)
  • PMD10K100 - SILICON POWER DARLING TRANSISTORS (Central Semiconductor Corp)
  • PMD10K60 - SILICON POWER DARLING TRANSISTORS (Central Semiconductor Corp)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET 28 December 2022 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • ESD protection up to 2 kV 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics (per transistor) RDSon drain-source on-state VGS = 4.
Published: |