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PMDT290UCE - 800 / 550 mA N/P-channel Trench MOSFET

Description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Very fast switching.
  • Trench MOSFET technology.
  • ESD protection up to 2 kV.
  • AEC-Q101 qualified 1.3.

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Datasheet preview – PMDT290UCE

Datasheet Details

Part number PMDT290UCE
Manufacturer NXP Semiconductors
File Size 210.04 KB
Description 800 / 550 mA N/P-channel Trench MOSFET
Datasheet download datasheet PMDT290UCE Datasheet
Additional preview pages of the PMDT290UCE datasheet.

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Full PDF Text Transcription

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SO T6 PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Rev. 1 — 6 October 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1.
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